Issued Patents 2024
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12160995 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Tzu-Yu Lin, Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-12-03 |
| 12137572 | Ferroelectric memory device and method of manufacturing the same | Yi Yang Wei, Tzu-Yu Lin, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-11-05 |
| 12127483 | Doped sidewall spacer/etch stop layer for memory | Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-10-22 |
| 12075626 | Memory window of MFM MOSFET for small cell size | Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-08-27 |
| 12069867 | Ferroelectric random access memory device with seed layer | Hsing-Lien Lin, Hsun-Chung Kuang, Yi Yang Wei | 2024-08-20 |
| 12035537 | Interface film to mitigate size effect of memory device | Yi Yang Wei, Hai-Dang Trinh, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-07-09 |
| 11967611 | Multilayer structure, capacitor structure and electronic device | Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Hsun-Chung Kuang | 2024-04-23 |
| 11916127 | Multi-layer electrode to improve performance of ferroelectric memory device | Yi Yang Wei, Hsin-Yu Lai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-27 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-06 |