Issued Patents 2024
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12167611 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Tzu-Yu Chen, Fu-Chen Chang | 2024-12-10 |
| 12161056 | Memory structure | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chin-Yu Mei, Po-Hao Tseng | 2024-12-03 |
| 12156409 | Memory layout for reduced line loading | Chih-Yang Chang | 2024-11-26 |
| 12082421 | Semiconductor device and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu | 2024-09-03 |
| 12075634 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Yu-Wen Liao | 2024-08-27 |
| 12069971 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Hsing-Lien Lin | 2024-08-20 |
| 12057154 | Method for efficiently waking up ferroelectric memory | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu | 2024-08-06 |
| 12041861 | RRAM bottom electrode | Fu-Chen Chang, Kuo-Chi Tu | 2024-07-16 |
| 12040019 | Methods for enlarging the memory window and improving data retention in resistive memory device | Fu-Chen Chang, Chu-Jie Huang, Nai-Chao Su, Kuo-Chi Tu | 2024-07-16 |
| 11980041 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Yu-Wen Liao | 2024-05-07 |
| 11944021 | Metal landing on top electrode of RRAM | Chih-Yang Chang | 2024-03-26 |
| 11915754 | Resistive random access memory device | Yu-Der Chih, Chung-Cheng Chou | 2024-02-27 |
| 11894267 | Method for fabricating integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Yu-Wen Liao, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2024-02-06 |
| 11889705 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu +1 more | 2024-01-30 |
| 11869564 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Kuo-Chi Tu, Yong-Shiuan Tsair | 2024-01-09 |