Issued Patents 2023
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856797 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Kuo-Chi Tu, Wen-Ting Chu | 2023-12-26 |
| 11844286 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-12-12 |
| 11839090 | Memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Wen-Ting Chu | 2023-12-05 |
| 11832529 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Wen-Ting Chu, Kuei-Hung Shen +2 more | 2023-11-28 |
| 11751405 | Integrated circuit and method for fabricating the same | Chieh-Fei Chiu, Wen-Ting Chu, Yong-Shiuan Tsair, Chih-Yang Chang, Chin-Chieh Yang | 2023-09-05 |
| 11751485 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-09-05 |
| 11737290 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Wen-Ting Chu | 2023-08-22 |
| 11723294 | Memory device and method for fabricating the same | Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Wen-Ting Chu | 2023-08-08 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Hsia-Wei Chen, Chin-Chieh Yang +2 more | 2023-08-08 |
| 11678592 | Step height mitigation in resistive random access memory structures | Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Wen-Ting Chu, Huei-Tzu Wang | 2023-06-13 |
| 11637239 | High yield RRAM cell with optimized film scheme | Trinh Hai Dang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chin-Chieh Yang, Wen-Ting Chu +1 more | 2023-04-25 |