Issued Patents 2023
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856788 | Semiconductor device and method of fabricating the same | Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu, Alexander Kalnitsky | 2023-12-26 |
| 11849588 | Semiconductor device and method of forming the same | Fu-Chen Chang, Kuo-Chi Tu, Tzu-Yu Chen | 2023-12-19 |
| 11844286 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Tung-Sheng Hsiao +3 more | 2023-12-12 |
| 11800720 | Memory cell having a top electrode interconnect arranged laterally from a recess | Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang | 2023-10-24 |
| 11785777 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Kuo-Chi Tu, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang | 2023-10-10 |
| 11751485 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Tung-Sheng Hsiao +3 more | 2023-09-05 |
| 11751401 | Integrated circuit and method for manufacturing the same | Tzu-Yu Chen, Kuo-Chi Tu | 2023-09-05 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen +2 more | 2023-08-08 |
| 11723213 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang | 2023-08-08 |
| 11706930 | Semiconductor device and method for manufacturing the same | Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu | 2023-07-18 |
| 11587881 | Substrate structure including embedded semiconductor device | Chien-Fan Chen, Yu-Ju Liao, Chu-Jie Yang | 2023-02-21 |
| 11557609 | Integrated circuit structure and method of forming the same | Tzu-Yu Chen, Fu-Chen Chang, Kuo-Chi Tu | 2023-01-17 |