Issued Patents 2023
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856801 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hai-Dang Trinh, Hsun-Chung Kuang | 2023-12-26 |
| 11856797 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Chih-Yang Chang, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao | 2023-12-26 |
| 11844286 | Flat bottom electrode via (BEVA) top surface for memory | Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih, Tung-Sheng Hsiao +3 more | 2023-12-12 |
| 11839090 | Memory cells separated by a void-free dielectric structure | Wen-Ting Chu, Yu-Wen Liao | 2023-12-05 |
| 11751485 | Flat bottom electrode via (BEVA) top surface for memory | Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih, Tung-Sheng Hsiao +3 more | 2023-09-05 |
| 11723294 | Memory device and method for fabricating the same | Chih-Hung Pan, Chih-Hsiang Chang, Yu-Wen Liao, Wen-Ting Chu | 2023-08-08 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Chin-Chieh Yang +2 more | 2023-08-08 |
| 11545202 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsun-Chung Kuang, Hai-Dang Trinh, Cheng-Yuan Tsai | 2023-01-03 |