Issued Patents 2023
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856801 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2023-12-26 |
| 11844226 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-12-12 |
| 11778931 | Diffusion barrier layer in programmable metallization cell | Albert Zhong, Cheng-Yuan Tsai, Shing-Chyang Pan | 2023-10-03 |
| 11758830 | Memory device structure with protective element | Hsing-Lien Lin, Cheng-Yuan Tsai | 2023-09-12 |
| 11737280 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Bi-Shen Lee, Tzu-Yu Lin, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-22 |
| 11723212 | Memory window of MFM MOSFET for small cell size | Yi Yang Wei, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-08 |
| 11716913 | Data storage structure for improving memory cell reliability | Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2023-08-01 |
| 11683999 | Switching layer scheme to enhance RRAM performance | Cheng-Yuan Tsai, Hsing-Lien Lin, Wen-Ting Chu | 2023-06-20 |
| 11665909 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-05-30 |
| 11610927 | Capping structure along image sensor element to mitigate damage to active layer | Chun-Kai Lan, Hsun-Chung Kuang | 2023-03-21 |
| 11594678 | Diffusion barrier layer in programmable metallization cell | Albert Zhong, Cheng-Yuan Tsai, Shing-Chyang Pan | 2023-02-28 |
| 11545202 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-01-03 |