Issued Patents 2023
Showing 76–100 of 104 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11665975 | Spin orbit coupling memory device with top spin orbit coupling electrode and selector | Tanay Gosavi, Chia-Ching Lin, Ian A. Young | 2023-05-30 |
| 11664371 | Multi-function threshold gate with adaptive threshold and stacked planar paraelectric capacitors | Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania, Debo Olaosebikan | 2023-05-30 |
| 11664370 | Multi-function paraelectric threshold gate with input based adaptive threshold | Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania | 2023-05-30 |
| 11659714 | Ferroelectric device film stacks with texturing layer, and method of forming such | Niloy Mukherjee, Ramamoorthy Ramesh, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more | 2023-05-23 |
| 11658664 | Asynchronous circuit with majority gate or minority gate logic | Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-05-23 |
| 11652487 | Parallel pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic | Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-05-16 |
| 11652482 | Parallel pull-up and pull-down networks controlled asynchronously by threshold logic gate | Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya | 2023-05-16 |
| 11646071 | Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell | Rajeev Kumar Dokania, Amrita Mathuriya | 2023-05-09 |
| 11641205 | Reset mechanism for a chain of majority or minority gates having paraelectric material | Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania | 2023-05-02 |
| 11641747 | Integration of a ferroelectric memory device with a transistor | Gaurav Thareja, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2023-05-02 |
| 11637090 | Method of forming a 3D stacked compute and memory | Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh | 2023-04-25 |
| 11621391 | Antiferromagnet based spin orbit torque memory device | Chia-Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Kaan Oguz, Ian A. Young | 2023-04-04 |
| 11616507 | Ferroelectric based latch | Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya | 2023-03-28 |
| 11610620 | Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line to minimize read or write disturb effects | Rajeev Kumar Dokania, Amrita Mathuriya | 2023-03-21 |
| 11611345 | NAND based sequential circuit with ferroelectric or paraelectric material | Amrita Mathuriya, Ikenna Odinaka, Rajeev Kumar Dokania, Rafael Rios | 2023-03-21 |
| 11610619 | Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects | Rajeev Kumar Dokania, Amrita Mathuriya | 2023-03-21 |
| 11605411 | Method of forming stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan +1 more | 2023-03-14 |
| 11605413 | Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell | Rajeev Kumar Dokania, Amrita Mathuriya | 2023-03-14 |
| 11600659 | Cross-point magnetic random access memory with piezoelectric selector | Dmitri E. Nikonov, Ian A. Young | 2023-03-07 |
| 11594270 | Perpendicular spin injection via spatial modulation of spin orbit coupling | Tanay Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Christopher J. Wiegand, Ian A. Young | 2023-02-28 |
| 11594673 | Two terminal spin orbit memory devices and methods of fabrication | Noriyuki Sato, Angeline Smith, Tanay Gosavi, Kaan Oguz, Kevin P. O'Brien +8 more | 2023-02-28 |
| 11594624 | Transistor structures formed with 2DEG at complex oxide interfaces | Dmitri E. Nikonov, Chia-Ching Lin, Tanay Gosavi, Uygar E. Avci, Ian A. Young | 2023-02-28 |
| 11581417 | Improper ferroelectric active and passive devices | Uygar E. Avci, Sou-Chi Chang, Ian A. Young | 2023-02-14 |
| 11575083 | Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory | Tanay Gosavi, Kaan Oguz, Ian A. Young, Dmitri E. Nikonov, Chia-Ching Lin | 2023-02-07 |
| 11574666 | Spin orbit torque memory devices and methods of fabrication | Tanay Gosavi, Chia-Ching Lin, Kaan Oguz, Ian A. Young | 2023-02-07 |