Issued Patents 2023
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11854593 | Ferroelectric memory device integrated with a transition electrode | Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni | 2023-12-26 |
| 11844225 | Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication | Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-12 |
| 11844203 | Conductive and insulative hydrogen barrier layer for memory devices | Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-12 |
| 11839070 | High density dual encapsulation materials for capacitors and methods of fabrication | Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-05 |
| 11839088 | Integrated via and bridge electrodes for memory array applications and methods of fabrication | Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2023-12-05 |
| 11832451 | High density ferroelectric random access memory (FeRAM) devices and methods of fabrication | Debraj Guhabiswas, Maria Isabel Perez, Jason Y. Wu, James David Clarkson, Gabriel Antonio Paulius Velarde +4 more | 2023-11-28 |
| 11832537 | Titanium silicon nitride barrier layer | Jae Seok Heo, Jerry Mack, Somilkumar J. Rathi | 2023-11-28 |
| 11792998 | Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas | Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-17 |
| 11785782 | Embedded memory with encapsulation layer adjacent to a memory stack | Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-10-10 |
| 11769790 | Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors | Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman +8 more | 2023-09-26 |
| 11765909 | Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area | Noriyuki Sato, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-19 |
| 11765908 | Memory device fabrication through wafer bonding | Mauricio Manfrini, Noriyuki Sato, James David Clarkson, Abel Fernandez, Somilkumar J. Rathi +4 more | 2023-09-19 |
| 11744081 | Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such | Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more | 2023-08-29 |
| 11741428 | Iterative monetization of process development of non-linear polar material and devices | Sasikanth Manipatruni, Noriyuki Sato, Tanay Gosavi, Somilkumar J. Rathi, James David Clarkson +3 more | 2023-08-29 |
| 11716858 | Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such | Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more | 2023-08-01 |
| 11659714 | Ferroelectric device film stacks with texturing layer, and method of forming such | Ramamoorthy Ramesh, Sasikanth Manipatruni, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more | 2023-05-23 |
| 11587784 | Smooth titanium nitride layers and methods of forming the same | Sung Hoon Jung, Hee Seok Kim, Kyu Jin Choi, Moonsig Joo, Hae Young Kim +4 more | 2023-02-21 |
| 11586641 | Method and mechanism for efficient re-distribution of in-memory columnar units in a clustered RDBMs on topology change | Kartik Kulkarni, Tirthankar Lahiri, Vineet Marwah, Juan R. Loaiza | 2023-02-21 |