Issued Patents 2022
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532698 | Diffusion barrier layer in top electrode to increase break down voltage | Chii-Ming Wu, Hai-Dang Trinh, Fa-Shen Jiang | 2022-12-20 |
| 11527717 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee | 2022-12-13 |
| 11495532 | Techniques to inhibit delamination from flowable gap-fill dielectric | Chin-Wei Liang, Hsun-Chung Kuang, Ching Ju Yang | 2022-11-08 |
| 11482668 | RRAM structure | Hai-Dang Trinh, Chii-Ming Wu, Fa-Shen Jiang | 2022-10-25 |
| 11476416 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang, Chii-Ming Wu | 2022-10-18 |
| 11437573 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang | 2022-09-06 |
| 11430951 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsun-Chung Kuang, Bi-Shen Lee | 2022-08-30 |
| 11430729 | MIM capacitor with a symmetrical capacitor insulator structure | Cheng-Te Lee, Rei-Lin Chu, Chii-Ming Wu, Yeur-Luen Tu, Chung-Yi Yu | 2022-08-30 |
| 11404484 | Image sensors with organic photodiodes and methods for forming the same | Chin-Wei Liang, Chia-Shiung Tsai, Cheng-Yuan Tsai | 2022-08-02 |
| 11393833 | Ferroelectric random access memory device with seed layer | Bi-Shen Lee, Hsun-Chung Kuang, Yi Yang Wei | 2022-07-19 |
| 11362271 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Wen-Ting Chu | 2022-06-14 |