Issued Patents 2022
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11437084 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Kuo-Chi Tu, Yong-Shiuan Tsair | 2022-09-06 |
| 11387411 | Logic compatible RRAM structure and process | Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Kuo-Chi Tu, Yu-Wen Liao | 2022-07-12 |
| 11362271 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Hsing-Lien Lin | 2022-06-14 |
| 11329221 | Electrode structure to improve RRAM performance | Tong-Chern Ong, Ying-Lang Wang | 2022-05-10 |
| 11315861 | Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Yu-Wen Liao | 2022-04-26 |
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2022-04-26 |
| 11296147 | Method for manufacturing memory device having spacer | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chin-Yu Mei, Po-Hao Tseng | 2022-04-05 |
| 11276819 | Metal landing on top electrode of RRAM | Chih-Yang Chang | 2022-03-15 |
| 11257844 | Ferroelectric random access memory (FRAM) cell | Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu | 2022-02-22 |
| 11239279 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Kuo-Chi Tu, Yu-Wen Liao | 2022-02-01 |
| 11227872 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Tzu-Yu Chen, Fu-Chen Chang | 2022-01-18 |