Issued Patents 2022
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11502126 | Integrated circuit and fabrication method thereof | Harry-Hak-Lay Chuang, Sheng-Wen Fu, Jun Chen, Sheng-Huang Huang | 2022-11-15 |
| 11489107 | Memory cell with top electrode via | Ming-Che Ku, Harry-Hak-Lay Chuang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang | 2022-11-01 |
| 11469372 | Memory cell with top electrode via | Ming-Che Ku, Harry-Hak-Lay Chuang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang | 2022-10-11 |
| 11469269 | Techniques for MRAM top electrode via connection | Sheng-Chang Chen, Harry-Hak-Lay Chuang, Sheng-Huang Huang | 2022-10-11 |
| 11437433 | Techniques for MRAM top electrode via connection | Sheng-Chang Chen, Harry-Hak-Lay Chuang, Sheng-Huang Huang | 2022-09-06 |
| 11380580 | Etch stop layer for memory device formation | Sheng-Huang Huang, Chung-Chiang Min, Harry-Hak-Lay Chuang, Sheng-Chang Chen | 2022-07-05 |
| 11355696 | Magnetic tunnel junction structures and related methods | Jun Chen, Chun-Heng Liao | 2022-06-07 |
| 11322543 | Method for MRAM top electrode connection | Harry-Hak-Lay Chuang, Sheng-Chang Chen, Sheng-Huang Huang | 2022-05-03 |
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Tong-Chern Ong, Wen-Ting Chu, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2022-04-26 |
| 11283009 | Method for manufacturing memory device having protection spacer | Harry-Hak-Lay Chuang, Chun-Heng Liao, Jun Chen | 2022-03-22 |
| 11264561 | Magnetic random access memory device and formation method thereof | Ming-Che Ku, Jun Chen, Sheng-Huang Huang, Jiun-Yu Tsai, Harry-Hak-Lay Chuang | 2022-03-01 |
| 11244983 | MRAM memory cell layout for minimizing bitcell area | Harry-Hak-Lay Chuang, Wen-Chun You, Yen-Yu Shih | 2022-02-08 |
| 11217627 | Magnetic random access memory device and formation method thereof | Harry-Hak-Lay Chuang, Jiun-Yu Tsai, Sheng-Huang Huang, Ming-Che Ku | 2022-01-04 |