Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11502126 | Integrated circuit and fabrication method thereof | Harry-Hak-Lay Chuang, Sheng-Wen Fu, Jun Chen, Hung Cho Wang | 2022-11-15 |
| 11489107 | Memory cell with top electrode via | Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai | 2022-11-01 |
| 11469269 | Techniques for MRAM top electrode via connection | Sheng-Chang Chen, Harry-Hak-Lay Chuang, Hung Cho Wang | 2022-10-11 |
| 11469372 | Memory cell with top electrode via | Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai | 2022-10-11 |
| 11437433 | Techniques for MRAM top electrode via connection | Sheng-Chang Chen, Harry-Hak-Lay Chuang, Hung Cho Wang | 2022-09-06 |
| 11380580 | Etch stop layer for memory device formation | Chung-Chiang Min, Harry-Hak-Lay Chuang, Hung Cho Wang, Sheng-Chang Chen | 2022-07-05 |
| 11322543 | Method for MRAM top electrode connection | Harry-Hak-Lay Chuang, Hung Cho Wang, Sheng-Chang Chen | 2022-05-03 |
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Wen-Ting Chu, Yu-Wen Liao +2 more | 2022-04-26 |
| 11264561 | Magnetic random access memory device and formation method thereof | Ming-Che Ku, Jun Chen, Jiun-Yu Tsai, Harry-Hak-Lay Chuang, Hung Cho Wang | 2022-03-01 |
| 11217627 | Magnetic random access memory device and formation method thereof | Harry-Hak-Lay Chuang, Jiun-Yu Tsai, Ming-Che Ku, Hung Cho Wang | 2022-01-04 |