Issued Patents 2022
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527713 | Top electrode via with low contact resistance | Hai-Dang Trinh, Hsun-Chung Kuang, Tzu-Chung Tsai, Yao-Wen Chang | 2022-12-13 |
| 11527717 | Resistive memory cell having a low forming voltage | Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang | 2022-12-13 |
| 11430951 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang | 2022-08-30 |
| 11404638 | Multi-doped data storage structure configured to improve resistive memory cell performance | Hai-Dang Trinh, Fa-Shen Jiang, Hsun-Chung Kuang | 2022-08-02 |
| 11393833 | Ferroelectric random access memory device with seed layer | Hsing-Lien Lin, Hsun-Chung Kuang, Yi Yang Wei | 2022-07-19 |