Issued Patents 2022
Showing 51–75 of 143 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11437279 | Method for fabricating a semiconductor device | Chun-Yuan Chen, Li-Zhen Yu, Huan-Chieh Su, Lo-Heng Chang, Cheng-Chi Chuang | 2022-09-06 |
| 11430891 | Gate all around structure with additional silicon layer and method for forming the same | Chen-Han Wang, Pei-Hsun Wang, Chun-Hsiung Lin | 2022-08-30 |
| 11430892 | Inner spacers for gate-all-around transistors | Kuo-Cheng Chiang, Zhi-Chang Lin, Shih-Cheng Chen, Pei-Hsun Wang, Lo-Heng Chang +1 more | 2022-08-30 |
| 11430789 | Semiconductor devices with backside contacts and isolation | Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang | 2022-08-30 |
| 11424243 | Semiconductor device and manufacturing method thereof | Kuo-Cheng Ching, Chih-Liang Chen, Shi Ning Ju | 2022-08-23 |
| 11424332 | Gap spacer for backside contact structure | Li-Zhen Yu, Lin-Yu Huang, Kuan-Lun Cheng | 2022-08-23 |
| 11424242 | Structure and formation method of semiconductor device with isolation structure | Shi Ning Ju, Kuo-Cheng Chiang, Kuan-Lun Cheng | 2022-08-23 |
| 11417653 | Semiconductor structure and method for forming the same | Jia-Ni Yu, Kuo-Cheng Chiang, Lung-Kun Chu, Chung-Wei Hsu, Mao-Lin Huang | 2022-08-16 |
| 11417777 | Enlargement of GAA nanostructure | Lo-Heng Chang, Jung-Hung Chang, Zhi-Chang Lin, Kuo-Cheng Chiang | 2022-08-16 |
| 11417750 | Gate air spacer for fin-like field effect transistor | Chien Ning Yao, Bo-Feng Young, Sai-Hooi Yeong, Kuan-Lun Cheng | 2022-08-16 |
| 11417745 | Structure and formation method of semiconductor device with metal gate stack | Jia-Chuan You, Huan-Chieh Su, Kuo-Cheng Chiang | 2022-08-16 |
| 11410876 | Semiconductor device with air gaps and method of fabrication thereof | Chia-Hao Chang, Lin-Yu Huang, Li-Zhen Yu, Cheng-Chi Chuang, Kuan-Lun Cheng | 2022-08-09 |
| 11404324 | Fin isolation structures of semiconductor devices | Kuo-Cheng Chiang, Kuan-Lun Cheng, Yen-Ming Chen | 2022-08-02 |
| 11404548 | Capacitance reduction for backside power rail device | Li-Zhen Yu, Cheng-Chi Chuang, Huan-Chieh Su, Lin-Yu Huang | 2022-08-02 |
| 11404315 | Method for manufacturing semiconductor device | Chia-Hao Chang, Jia-Chuan You, Yu-Ming Lin, Wai-Yi Lien | 2022-08-02 |
| 11393814 | Method for forming semiconductor device with helmet structure between two semiconductor fins | Kuo-Cheng Ching, Shi Ning Ju | 2022-07-19 |
| 11393815 | Transistors with varying width nanosheet | Yi-Hsiung Lin, Yi-Hsun Chiu, Shang-Wen Chang, Ching-Wei Tsai, Yu-Xuan Huang +1 more | 2022-07-19 |
| 11387181 | Integrated circuits with backside power rails | Chih-Chao Chou, Kuo-Cheng Chiang, Shi Ning Ju, Wen-Ting Lan | 2022-07-12 |
| 11385420 | Photon source comprising a plurality of optical sources and an optical shell to receive the light emitted by the optical source | Imtiaz Majid, Peng-Chih Li | 2022-07-12 |
| 11387140 | Enlarging contact area and process window for a contact via | Li-Zhen Yu, Cheng-Chi Chuang, Yu-Ming Lin, Lin-Yu Huang | 2022-07-12 |
| 11387233 | Semiconductor device structure and methods of forming the same | Huan-Chieh Su, Chun-Yuan Chen, Pei-Yu Wang, Cheng-Chi Chuang | 2022-07-12 |
| 11387237 | Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereof | Kuo-Cheng Ching, Ching-Wei Tsai, Kuan-Lun Cheng | 2022-07-12 |
| 11387346 | Gate patterning process for multi-gate devices | Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang | 2022-07-12 |
| 11387347 | Fin structures having varied fin heights for semiconductor device | Kuo-Cheng Chiang, Shi Ning Ju | 2022-07-12 |
| 11380783 | Structure and method for FinFET device with buried SiGe oxide | Kuo-Cheng Chiang, Carlos H. Diaz, Zhiqiang Wu | 2022-07-05 |