Issued Patents 2022
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532626 | Reduction of gate-drain capacitance | Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Kuo-Cheng Chiang, Chih-Hao Wang | 2022-12-20 |
| 11502034 | Semiconductor devices with backside power rail and methods of fabrication thereof | Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Shih-Cheng Chen, Shi Ning Ju +1 more | 2022-11-15 |
| 11469326 | Semiconductor devices and methods of fabrication thereof | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Chien Ning Yao, Kuo-Cheng Chiang +1 more | 2022-10-11 |
| 11450754 | Semiconductor devices and methods of manufacture | Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Kuo-Cheng Chiang | 2022-09-20 |
| 11450663 | Semiconductor device structure and methods of forming the same | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Chien Ning Yao, Kuo-Cheng Chiang +1 more | 2022-09-20 |
| 11437279 | Method for fabricating a semiconductor device | Chun-Yuan Chen, Li-Zhen Yu, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang | 2022-09-06 |
| 11430892 | Inner spacers for gate-all-around transistors | Kuo-Cheng Chiang, Zhi-Chang Lin, Shih-Cheng Chen, Chih-Hao Wang, Pei-Hsun Wang +1 more | 2022-08-30 |
| 11417777 | Enlargement of GAA nanostructure | Jung-Hung Chang, Zhi-Chang Lin, Kuo-Cheng Chiang, Chih-Hao Wang | 2022-08-16 |
| 11398550 | Semiconductor device with facet S/D feature and methods of forming the same | Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang | 2022-07-26 |
| 11322409 | Multi-gate devices and method of fabricating the same | Chih-Hao Wang, Kuo-Cheng Chiang, Jung-Hung Chang, Pei-Hsun Wang | 2022-05-03 |
| 11315925 | Uniform gate width for nanostructure devices | Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin +3 more | 2022-04-26 |
| 11309424 | Semiconductor device and manufacturing method thereof | Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Chien Ning Yao | 2022-04-19 |
| 11264502 | Semiconductor device and method | Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Kuo-Cheng Chiang, Chih-Hao Wang | 2022-03-01 |