Issued Patents 2022
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11522011 | Selector element with ballast for low voltage bipolar memory devices | Prashant Majhi, Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma | 2022-12-06 |
| 11488978 | Ferroelectric gate oxide based tunnel feFET memory | Prashant Majhi, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma | 2022-11-01 |
| 11462684 | Retention improvement by high-k encapsulation of RRAM devices | Albert Chen, Nathan Strutt, Oleg Golonzka, Pedro Quintero, Christopher J. Jezewski | 2022-10-04 |
| 11444024 | Subtractively patterned interconnect structures for integrated circuits | Kevin Lin, Noriyuki Sato, Tristan A. Tronic, Michael Christenson, Christopher J. Jezewski +10 more | 2022-09-13 |
| 11430949 | Metal filament memory cells | Ravi Pillarisetty, Prashant Majhi, Niloy Mukherjee | 2022-08-30 |
| 11417705 | RRAM memory cell and process to increase RRAM material area in an RRAM memory cell | Brian S. Doyle, Prashant Majhi, Ravi Pillarisetty, Ashishek Sharma | 2022-08-16 |
| 11404639 | Selector devices with integrated barrier materials | Brian S. Doyle, Prashant Majhi, Abhishek A. Sharma, Ravi Pillarisetty | 2022-08-02 |
| 11393874 | Independently scaling selector and memory in memory cell | Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty, Prashant Majhi | 2022-07-19 |
| 11393526 | Thin film based 1T-1R cell with resistive random access memory below a bitline | Ravi Pillarisetty, Abhishek A. Sharma, Prashant Majhi, Brian S. Doyle | 2022-07-19 |
| 11374056 | Selector devices | Brian S. Doyle, Ravi Pillarisetty, Prashant Majhi, Abhishek A. Sharma | 2022-06-28 |
| 11362140 | Word line with air-gap for non-volatile memories | Prashant Majhi, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma | 2022-06-14 |
| 11342457 | Strained thin film transistors | Prashant Majhi, Willy Rachmady, Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty +1 more | 2022-05-24 |
| 11335705 | Thin film tunnel field effect transistors having relatively increased width | Prashant Majhi, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma | 2022-05-17 |
| 11289509 | Double-gated ferroelectric field-effect transistor | Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Prashant Majhi | 2022-03-29 |
| 11250899 | 1S-1T ferroelectric memory | Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Prashant Majhi | 2022-02-15 |
| 11250317 | Three-dimensional oscillator structure | Dmitri E. Nikonov, Ian A. Young | 2022-02-15 |
| 11239156 | Planar slab vias for integrated circuit interconnects | Manish Chandhok, Nafees Kabir | 2022-02-01 |
| 11233090 | Double selector element for low voltage bipolar memory devices | Prashant Majhi, Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma | 2022-01-25 |
| 11233040 | Integration of high density cross-point memory and CMOS logic for high density low latency eNVM and eDRAM applications | Prashant Majhi, Brian S. Doyle, Ravi Pillarisetty, Yih Wang | 2022-01-25 |