| 11538806 |
Gate-all-around integrated circuit structures having high mobility |
Roza Kotlyar, Rishabh Mehandru, Stephen M. Cea, Biswajeet Guha, Tahir Ghani |
2022-12-27 |
| 11527612 |
Gate-all-around integrated circuit structures having vertically discrete source or drain structures |
Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Sean T. Ma, Tahir Ghani +3 more |
2022-12-13 |
| 11515420 |
Contacts to n-type transistors with X-valley layer over L-valley channels |
Cory E. Weber, Rishabh Mehandru, Harold W. Kennel, Benjamin Chu-Kung |
2022-11-29 |
| 11495672 |
Increased transistor source/drain contact area using sacrificial source/drain layer |
Biswajeet Guha, William Hsu, Stephen M. Cea, Tahir Ghani |
2022-11-08 |
| 11469299 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Patrick H. Keys, Tahir Ghani +2 more |
2022-10-11 |
| 11233152 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices |
Biswajeet Guha, William Hsu, Leonard P. GULER, Tahir Ghani |
2022-01-25 |