Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Ruilong Xie, Lars Liebmann, Bipul C. Paul, Daniel Chanemougame | 2019-12-10 |
| 10468300 | Contacting source and drain of a transistor device | Ruilong Xie, Andre P. Labonte, Lars Liebmann, Daniel Chanemougame, Chanro Park +1 more | 2019-11-05 |
| 10411010 | Tall single-fin FIN-type field effect transistor structures and methods | Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Lars Liebmann | 2019-09-10 |
| 10381459 | Transistors with H-shaped or U-shaped channels and method for forming the same | Ruilong Xie, Julien Frougier, Yi Qi, Edward J. Nowak, Andreas Knorr | 2019-08-13 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward J. Nowak, Lars Liebmann +2 more | 2019-05-14 |
| 10249728 | Air-gap gate sidewall spacer and method | Daniel Chanemougame, Andre P. Labonte, Ruilong Xie, Lars Liebmann, Guillaume Bouche | 2019-04-02 |
| 10249535 | Forming TS cut for zero or negative TS extension and resulting device | Ruilong Xie, Daniel Chanemougame, Lars Liebmann | 2019-04-02 |
| 10236218 | Methods, apparatus and system for forming wrap-around contact with dual silicide | Ruilong Xie, Julien Frougier, Hiroaki Niimi, Xusheng Wu | 2019-03-19 |
| 10211100 | Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor | Ruilong Xie, Lars Liebmann, Andre P. Labonte, Nicholas V. LiCausi, Guillaume Bouche +1 more | 2019-02-19 |
| 10204994 | Methods of forming a semiconductor device with a gate contact positioned above the active region | Ruilong Xie, Chanro Park, Andre P. Labonte, Lars Liebmann, Mark V. Raymond +2 more | 2019-02-12 |