Issued Patents 2019
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10475888 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic +1 more | 2019-11-12 |
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more | 2019-11-12 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Van H. Le, Matthew V. Metz, Willy Rachmady +2 more | 2019-09-03 |
| 10388733 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |
| 10325774 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more | 2019-06-18 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2019-06-11 |
| 10263074 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-04-16 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Ashish Agrawal, Matthew V. Metz, Willy Rachmady +8 more | 2019-04-02 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Matthew V. Metz, Niloy Mukherjee +7 more | 2019-04-02 |
| 10236369 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Marko Radosavljevic +4 more | 2019-03-19 |
| 10229991 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung +1 more | 2019-03-12 |
| 10224399 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2019-03-05 |
| 10204989 | Method of fabricating semiconductor structures on dissimilar substrates | Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner +3 more | 2019-02-12 |
| 10186581 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-01-22 |
| 10181518 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2019-01-15 |
| 10177249 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2019-01-08 |