Issued Patents 2019
Showing 51–75 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10290574 | Embedded metal-insulator-metal (MIM) decoupling capacitor in monolitic three-dimensional (3D) integrated circuit (IC) structure | Geng Wang, Kangguo Cheng, Chengwen Pei | 2019-05-14 |
| 10283565 | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element | Peng Xu, Kangguo Cheng, Choonghyun Lee | 2019-05-07 |
| 10283625 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Xin Miao | 2019-05-07 |
| 10283592 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-05-07 |
| 10269790 | Forming horizontal bipolar junction transistor compatible with nanosheets | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-04-23 |
| 10263075 | Nanosheet CMOS transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-04-16 |
| 10263100 | Buffer regions for blocking unwanted diffusion in nanosheet transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-04-16 |
| 10262861 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-04-16 |
| 10249709 | Stacked nanosheet field effect transistor device with substrate isolation | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-04-02 |
| 10249731 | Vertical FET with sharp junctions | Kangguo Cheng, Peng Xu, Heng Wu | 2019-04-02 |
| 10249539 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-04-02 |
| 10243054 | Integrating standard-gate and extended-gate nanosheet transistors on the same substrate | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-03-26 |
| 10243062 | Fabrication of a vertical fin field effect transistor having a consistent channel width | Kangguo Cheng | 2019-03-26 |
| 10243061 | Nanosheet transistor | Kangguo Cheng, Heng Wu, Peng Xu | 2019-03-26 |
| 10242916 | Stress memorization technique for strain coupling enhancement in bulk FINFET device | Kangguo Cheng, Chun-Chen Yeh | 2019-03-26 |
| 10236382 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-03-19 |
| 10236381 | IFinFET | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-03-19 |
| 10236290 | Method and structure for improving vertical transistor | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-03-19 |
| 10236255 | Contact having self-aligned air gap spacers | Junli Wang, Chih-Chao Yang | 2019-03-19 |
| 10229985 | Vertical field-effect transistor with uniform bottom spacer | Kangguo Cheng, Peng Xu, Heng Wu | 2019-03-12 |
| 10229920 | One-time programmable vertical field-effect transistor | Kangguo Cheng, Qintao Zhang, Geng Wang | 2019-03-12 |
| 10229919 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-03-12 |
| 10229857 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Ramachandra Divakaruni, Jeehwan Kim, Devendra K. Sadana | 2019-03-12 |
| 10224329 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-03-05 |
| 10224334 | Anti-fuse with reduced programming voltage | Kangguo Cheng, Chengwen Pei, Geng Wang | 2019-03-05 |