Issued Patents 2019
Showing 26–34 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10217846 | Vertical field effect transistor formation with critical dimension control | Ruilong Xie, Steven Bentley, Min Gyu Sung, Steven R. Soss, Hui Zang +8 more | 2019-02-26 |
| 10217839 | Field effect transistor (FET) with a gate having a recessed work function metal layer and method of forming the FET | Kisup Chung, Victor Chan, Koji Watanabe | 2019-02-26 |
| 10211092 | Transistor with robust air spacer | Kangguo Cheng | 2019-02-19 |
| 10211147 | Metal-insulator-metal capacitors with dielectric inner spacers | Xunyuan Zhang, Lei Sun, Yi Qi, Roderick A. Augur | 2019-02-19 |
| 10211100 | Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor | Ruilong Xie, Lars Liebmann, Nigel G. Cave, Andre P. Labonte, Nicholas V. LiCausi +1 more | 2019-02-19 |
| 10204994 | Methods of forming a semiconductor device with a gate contact positioned above the active region | Ruilong Xie, Andre P. Labonte, Lars Liebmann, Nigel G. Cave, Mark V. Raymond +2 more | 2019-02-12 |
| 10177041 | Fin-type field effect transistors (FINFETS) with replacement metal gates and methods | Ruilong Xie, Laertis Economikos, Min Gyu Sung | 2019-01-08 |
| 10177241 | Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistor | Ruilong Xie, Hoon Kim, Min Gyu Sung | 2019-01-08 |
| 10176996 | Replacement metal gate and fabrication process with reduced lithography steps | Min Gyu Sung, Hoon Kim | 2019-01-08 |