Issued Patents 2019
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10217869 | Semiconductor structure including low-K spacer material | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2019-02-26 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-02-26 |
| 10204916 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Veeraraghavan S. Basker, Kangguo Cheng | 2019-02-12 |
| 10186676 | Emissive devices for displays | Khaled Ahmed, Richmond Hicks | 2019-01-22 |
| 10177169 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2019-01-08 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Byeong Y. Kim +5 more | 2019-01-08 |
| 10170537 | Capacitor structure compatible with nanowire CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2019-01-01 |
| 10170637 | Perfectly symmetric gate-all-around FET on suspended nanowire | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-01-01 |
| 10170587 | Heterogeneous source drain region and extension region | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2019-01-01 |
| 10170550 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Alexander Reznicek | 2019-01-01 |
| 10170499 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Alexander Reznicek, Soon-Cheon Seo | 2019-01-01 |