| 10157923 |
Vertical transport transistors with equal gate stack thicknesses |
Ruqiang Bao, Zhenxing Bi, Zheng Xu |
2018-12-18 |
| 10147820 |
Germanium condensation for replacement metal gate devices with silicon germanium channel |
Takashi Ando, Pouya Hashemi |
2018-12-04 |
| 10141420 |
Transistors with dielectric-isolated source and drain regions |
Kangguo Cheng, Juntao Li, Peng Xu |
2018-11-27 |
| 10141232 |
Vertical CMOS devices with common gate stacks |
Injo Ok, Soon-Cheon Seo |
2018-11-27 |
| 10134642 |
Semiconductor device and method of forming the semiconductor device |
Brent A. Anderson, Ruqiang Bao, Paul C. Jamison |
2018-11-20 |
| 10134833 |
Multiple work function device using GeOx/TiN cap on work function setting metal |
Takashi Ando, Pouya Hashemi |
2018-11-20 |
| 10128372 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Shogo Mochizuki, Hemanth Jagannathan |
2018-11-13 |
| 10115800 |
Vertical fin bipolar junction transistor with high germanium content silicon germanium base |
Seyoung Kim, Injo Ok, Soon-Cheon Seo |
2018-10-30 |
| 10103147 |
Vertical transport transistors with equal gate stack thicknesses |
Ruqiang Bao, Zhenxing Bi, Zheng Xu |
2018-10-16 |
| 10084055 |
Uniform threshold voltage for nanosheet devices |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Vijay Narayanan, Koji Watanabe |
2018-09-25 |
| 10084082 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Shogo Mochizuki, Hemanth Jagannathan |
2018-09-25 |
| 10079233 |
Semiconductor device and method of forming the semiconductor device |
Robin Hsin Kuo Chao, Hemanth Jagannathan, Chun Wing Yeung, Jingyun Zhang |
2018-09-18 |
| 10008417 |
Vertical transport fin field effect transistors having different channel lengths |
Ruqiang Bao, Shogo Mochizuki, Chun Wing Yeung |
2018-06-26 |
| 10008386 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Vijay Narayanan |
2018-06-26 |
| 10002791 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison |
2018-06-19 |
| 9984263 |
Simplified gate stack process to improve dual channel CMOS performance |
Hemanth Jagannathan, Richard Southwick |
2018-05-29 |
| 9960272 |
Bottom contact resistance reduction on VFET |
Ruqiang Bao, Shogo Mochizuki, Hemanth Jagannathan |
2018-05-01 |
| 9947767 |
Self-limited inner spacer formation for gate-all-around field effect transistors |
Robinhsinku Chao, Heng Wu, Chun Wing Yeung, Jingyun Zhang |
2018-04-17 |
