Issued Patents 2017
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818054 | Tag with tunable retro-reflectors | Evan G. Colgan, Fuad E. Doany, Li-Wen Hung, Bucknell C. Webb | 2017-11-14 |
| 9818877 | Embedded source/drain structure for tall finFET and method of formation | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo | 2017-11-14 |
| 9818741 | Structure and method to prevent EPI short between trenches in FINFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more | 2017-11-14 |
| 9761727 | Vertical FETs with variable bottom spacer recess | Hari V. Mallela, Rajasekhar Venigalla | 2017-09-12 |
| 9741722 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more | 2017-08-22 |
| 9735275 | Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty | Gauri Karve, Robert R. Robison | 2017-08-15 |
| 9735162 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran +1 more | 2017-08-15 |
| 9728466 | Vertical field effect transistors with metallic source/drain regions | Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla | 2017-08-08 |
| 9680019 | Fin-type field-effect transistors with strained channels | Henry K. Utomo, Yun-Yu Wang | 2017-06-13 |
| 9679993 | Fin end spacer for preventing merger of raised active regions | Emre Alptekin, Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran | 2017-06-13 |
| 9647124 | Semiconductor devices with graphene nanoribbons | Emre Alptekin, Viraj Y. Sardesai | 2017-05-09 |
| 9601491 | Vertical field effect transistors having epitaxial fin channel with spacers below gate structure | Hari V. Mallela, Rajasekhar Venigalla | 2017-03-21 |
| 9601380 | Fin end spacer for preventing merger of raised active regions | Emre Alptekin, Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran | 2017-03-21 |
| 9595527 | Coaxial carbon nanotube capacitor for eDRAM | — | 2017-03-14 |
| 9577068 | Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation | Gregory Costrini, Ravikumar Ramachandran, Richard S. Wise | 2017-02-21 |
| 9564443 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran +1 more | 2017-02-07 |
| 9564445 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more | 2017-02-07 |
| 9536900 | Forming fins of different semiconductor materials on the same substrate | Ravikumar Ramachandran, Huiling Shang, Keith H. Tabakman, Henry K. Utomo | 2017-01-03 |