Issued Patents 2017
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9716158 | Air gap spacer between contact and gate region | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2017-07-25 |
| 9716142 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-07-25 |
| 9698251 | Fin reveal last for finfet | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-07-04 |
| 9698266 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-07-04 |
| 9698230 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2017-07-04 |
| 9666693 | Structure and method to minimize junction capacitance in NANO sheets | Bruce B. Doris, Terence B. Hook | 2017-05-30 |
| 9659960 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2017-05-23 |
| 9653458 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-05-16 |
| 9653602 | Tensile and compressive fins for vertical field effect transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-05-16 |
| 9653547 | Integrated etch stop for capped gate and method for manufacturing the same | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2017-05-16 |
| 9653359 | Bulk fin STI formation | Kangguo Cheng, Juntao Li | 2017-05-16 |
| 9647139 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2017-05-09 |
| 9647086 | Early PTS with buffer for channel doping control | Steven Bentley, Jody A. Fronheiser, Joseph S. Washington, Pierre Morin | 2017-05-09 |
| 9640436 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2017-05-02 |
| 9607899 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-03-28 |
| 9595605 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-03-14 |
| 9577038 | Structure and method to minimize junction capacitance in nano sheets | Bruce B. Doris, Terence B. Hook | 2017-02-21 |