Issued Patents 2017
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9837263 | Atomic layer deposition of silicon carbon nitride based materials | — | 2017-12-05 |
| 9828674 | Synthesis and use of precursors for ALD of group VA element containing thin films | Timo Hatanpää, Mikko Ritala, Markku Leskelä | 2017-11-28 |
| 9824881 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Shang Chen | 2017-11-21 |
| 9812320 | Method and apparatus for filling a gap | Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde, Suvi Haukka +2 more | 2017-11-07 |
| 9783563 | Synthesis and use of precursors for ALD of tellurium and selenium thin films | Timo Hatanpää, Mikko Ritala, Markku Leskelä | 2017-10-10 |
| 9786491 | Formation of SiOCN thin films | Toshiya Suzuki | 2017-10-10 |
| 9786492 | Formation of SiOCN thin films | Toshiya Suzuki | 2017-10-10 |
| 9646820 | Methods for forming conductive titanium oxide thin films | Mikko Ritala, Markku Leskelä | 2017-05-09 |
| 9634106 | Doped metal germanide and methods for making the same | Suvi Haukka, Tom E. Blomberg, Eva Tois | 2017-04-25 |
| 9576792 | Deposition of SiN | Shang Chen, Ryoko Yamada, Antti Niskanen | 2017-02-21 |
| 9576790 | Deposition of boron and carbon containing materials | Yosuke Kimura, Kunitoshi Namba, Wataru Adachi, Hideaki Fukuda, Werner Knaepen +2 more | 2017-02-21 |
| 9564309 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Shang Chen, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2017-02-07 |
| 9543140 | Deposition of boron and carbon containing materials | — | 2017-01-10 |
| 9540729 | Deposition of titanium nanolaminates for use in integrated circuit fabrication | Seiji Okura, Hidemi Suemori | 2017-01-10 |