Issued Patents 2011
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8071442 | Transistor with embedded Si/Ge material having reduced offset to the channel region | Stephan Kronholz, Andy Wei, Andreas Ott | 2011-12-06 |
| 7981740 | Enhanced cap layer integrity in a high-K metal gate stack by using a hard mask for offset spacer patterning | Kerstin Ruttloff, Martin Mazur, Frank Seliger, Ralf Otterbach | 2011-07-19 |
| 7977179 | Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation | Anthony Mowry, Guido Koerner, Ralf Otterbach | 2011-07-12 |
| 7943462 | Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer | Sven Beyer, Thilo Scheiper, Jan Hoentschel | 2011-05-17 |
| 7906385 | Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps | Frank Wirbeleit, Anthony Mowry | 2011-03-15 |
| 7879667 | Blocking pre-amorphization of a gate electrode of a transistor | Anthony Mowry, Andy Wei, Roman Boschke | 2011-02-01 |