RB

Roman Boschke

Globalfoundries: 3 patents #18 of 305Top 6%
📍 Dresden, DE: #21 of 273 inventorsTop 8%
Overall (2011): #37,680 of 364,097Top 15%
3
Patents 2011

Issued Patents 2011

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
7964458 Method for forming a strained transistor by stress memorization based on a stressed implantation mask Frank Wirbeleit, Martin Gerhardt 2011-06-21
7923338 Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence Maciej Wiatr, Anthony Mowry 2011-04-12
7879667 Blocking pre-amorphization of a gate electrode of a transistor Anthony Mowry, Markus Lenski, Andy Wei 2011-02-01