Issued Patents 2011
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8048792 | Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material | Klaus Hempel, Andreas Ott, Stephan Kruegel | 2011-11-01 |
| 8039335 | Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain | Manfred Horstmann, Patrick Press, Wolfgang Buchholtz | 2011-10-18 |
| 8030148 | Structured strained substrate for forming strained transistors with reduced thickness of active layer | Jan Hoentschel, Andy Wei | 2011-10-04 |
| 7943462 | Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer | Thilo Scheiper, Jan Hoentschel, Markus Lenski | 2011-05-17 |
| 7893503 | Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain | Manfred Horstmann, Patrick Press, Wolfgang Buchholtz | 2011-02-22 |