Issued Patents 2011
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8062952 | Strain transformation in biaxially strained SOI substrates for performance enhancement of P-channel and N-channel transistors | Stefan Flachowsky, Andy Wei | 2011-11-22 |
| 8039342 | Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal | Uwe Griebenow, Thilo Scheiper, Andy Wei | 2011-10-18 |
| 8034669 | Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region | Uwe Griebenow | 2011-10-11 |
| 8030148 | Structured strained substrate for forming strained transistors with reduced thickness of active layer | Andy Wei, Sven Beyer | 2011-10-04 |
| 8026134 | Recessed drain and source areas in combination with advanced silicide formation in transistors | Uwe Griebenow, Andy Wei, Thilo Scheiper | 2011-09-27 |
| 8018260 | Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptation | Vassilios Papageorgiou, Maciej Wiatr | 2011-09-13 |
| 8017504 | Transistor having a high-k metal gate stack and a compressively stressed channel | Uwe Griebenow, Kai Frohberg | 2011-09-13 |
| 7977225 | Reducing implant degradation in tilted implantations by shifting implantation masks | Andre Poock | 2011-07-12 |
| 7943462 | Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer | Sven Beyer, Thilo Scheiper, Markus Lenski | 2011-05-17 |
| 7943442 | SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device | Andreas Gehring, Andy Wei | 2011-05-17 |
| 7863171 | SOI transistor having a reduced body potential and a method of forming the same | Andy Wei, Joe Bloomquist, Manfred Horstmann | 2011-01-04 |