Issued Patents 2011
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8039342 | Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal | Uwe Griebenow, Jan Hoentschel, Andy Wei | 2011-10-18 |
| 8026134 | Recessed drain and source areas in combination with advanced silicide formation in transistors | Uwe Griebenow, Andy Wei, Jan Hoentschel | 2011-09-27 |
| 7943462 | Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer | Sven Beyer, Jan Hoentschel, Markus Lenski | 2011-05-17 |