Issued Patents 2011
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8039342 | Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal | Jan Hoentschel, Thilo Scheiper, Andy Wei | 2011-10-18 |
| 8034669 | Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region | Jan Hoentschel | 2011-10-11 |
| 8026134 | Recessed drain and source areas in combination with advanced silicide formation in transistors | Andy Wei, Jan Hoentschel, Thilo Scheiper | 2011-09-27 |
| 8017504 | Transistor having a high-k metal gate stack and a compressively stressed channel | Jan Hoentschel, Kai Frohberg | 2011-09-13 |
| 7964970 | Technique for enhancing transistor performance by transistor specific contact design | Martin Gerhardt, Ralf Richter, Thomas Feudel | 2011-06-21 |
| 7887978 | Method of detecting repeating defects in lithography masks on the basis of test substrates exposed under varying conditions | Martin Mazur, Wolfram Grundke, Andre Poock | 2011-02-15 |
| 7871877 | Technique for strain engineering in silicon-based transistors by using implantation techniques for forming a strain-inducing layer under the channel region | Kai Frohberg, Martin Gerhardt | 2011-01-18 |