JH

Joerg Hohage

AM AMD: 7 patents #9 of 913Top 1%
Globalfoundries: 1 patents #73 of 305Top 25%
📍 Dresden, DE: #3 of 273 inventorsTop 2%
Overall (2011): #6,088 of 364,097Top 2%
8
Patents 2011

Issued Patents 2011

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
8053354 Reduced wafer warpage in semiconductors by stress engineering in the metallization system Matthias Lehr, Frank Koschinsky 2011-11-08
8034726 Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials Ralf Richter, Michael Finken, Heike Salz 2011-10-11
7994059 Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device Ralf Richter, Martin Gerhardt, Martin Mazur 2011-08-09
7994072 Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device Michael Finken, Ralf Richter 2011-08-09
7938973 Arc layer having a reduced flaking tendency and a method of manufacturing the same Ralf Richter, Martin Mazur 2011-05-10
7906383 Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device Ralf Richter, Andy Wei, Manfred Horstmann 2011-03-15
7875561 Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material Michael Finken, Ralf Richter 2011-01-25
7867917 Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity Matthias Lehr, Volker Kahlert 2011-01-11