Issued Patents 2005
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6977194 | Structure and method to improve channel mobility by gate electrode stress modification | Michael P. Belyansky, Dureseti Chidambarrao, Bruce B. Doris, Oleg Gluschenkov | 2005-12-20 |
| 6974981 | Isolation structures for imposing stress patterns | Dureseti Chidambarrao, Bruce B. Doris, Jack A. Mandelman | 2005-12-13 |
| 6933577 | High performance FET with laterally thin extension | Cyril Cabral, Jr., Oleg Gluschenkov | 2005-08-23 |
| 6914303 | Ultra thin channel MOSFET | Bruce B. Doris, Thomas S. Kanarsky, Ying Zhang, Huilong Zhu, Meikei Ieong | 2005-07-05 |
| 6911384 | Gate structure with independently tailored vertical doping profile | Bruce B. Doris, Oleg Gluschenkov, Jack A. Mandelman, Carl Radens | 2005-06-28 |
| 6890808 | Method and structure for improved MOSFETs using poly/silicide gate height control | Dureseti Chidambarrao | 2005-05-10 |
| 6887751 | MOSFET performance improvement using deformation in SOI structure | Dureseti Chidambarrao | 2005-05-03 |
| 6878582 | Low-GIDL MOSFET structure and method for fabrication | Bruce B. Doris, Oleg Gluschenkov, Jack A. Mandelman, Carl Radens | 2005-04-12 |
| 6878978 | CMOS performance enhancement using localized voids and extended defects | Dureseti Chidambarrao, Suryanarayan G. Hegde | 2005-04-12 |
| 6873010 | High performance logic and high density embedded dram with borderless contact and antispacer | Dureseti Chidambarrao, Bruce B. Doris, Oleg Gluschenkov, Rajarao Jammy, Jack A. Mandelman | 2005-03-29 |
| 6872641 | Strained silicon on relaxed sige film with uniform misfit dislocation density | Dureseti Chidambarrao | 2005-03-29 |
| 6869866 | Silicide proximity structures for CMOS device performance improvements | Dureseti Chidambarrao, Rajesh Rengarajan, An Steegen | 2005-03-22 |
| 6858488 | CMOS performance enhancement using localized voids and extended defects | Dureseti Chidambarrao, Suryanarayan G. Hegde | 2005-02-22 |
| 6841826 | Low-GIDL MOSFET structure and method for fabrication | Bruce B. Doris, Oleg Gluschenkov, Jack A. Mandelman, Carl Radens | 2005-01-11 |