Issued Patents 2005
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6967376 | Divot reduction in SIMOX layers | Stephen Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee | 2005-11-22 |
| 6958286 | Method of preventing surface roughening during hydrogen prebake of SiGe substrates | Huajie Chen, Dan M. Mocuta, Richard J. Murphy, Stephan W. Bedell | 2005-10-25 |
| 6946373 | Relaxed, low-defect SGOI for strained Si CMOS applications | Paul D. Agnello, Stephen W. Bedell, Robert H. Dennard, Anthony G. Domenicucci, Keith E. Fogel | 2005-09-20 |
| 6888221 | BICMOS technology on SIMOX wafers | Alvin J. Joseph, Qizhi Liu | 2005-05-03 |
| 6884667 | Field effect transistor with stressed channel and method for making same | Bruce B. Doris, Dureseti Chidambarrao, Xavier Baie, Jack A. Mandelman, Dominic J. Schepis | 2005-04-26 |
| 6878611 | Patterned strained silicon for high performance circuits | Stephen W. Bedell, Tze-Chiang Chen, Kwang Su Choe, Keith E. Fogel | 2005-04-12 |
| 6875982 | Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000X | Stephen W. Bedell, John Bruley, Anthony G. Domenicucci | 2005-04-05 |
| 6861158 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Ghavam G. Shahidi | 2005-03-01 |
| 6855436 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Stephen W. Bedell, Keith E. Fogel, Ghavam G. Shahidi | 2005-02-15 |
| 6846727 | Patterned SOI by oxygen implantation and annealing | Keith E. Fogel, Mark C. Hakey, Steven J. Holmes, Ghavam G. Shahidi | 2005-01-25 |
| 6841457 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion | Stephen W. Bedell, Keith E. Fogel | 2005-01-11 |