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Satyanarayana V. Nitta

IBM: 9 patents #75 of 5,464Top 2%
📍 Poughquag, NY: #1 of 14 inventorsTop 8%
🗺 New York: #95 of 9,035 inventorsTop 2%
Overall (2004): #1,883 of 270,089Top 1%
9
Patents 2004

Issued Patents 2004

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
6831366 Interconnects containing first and second porous low-k dielectrics separated by a porous buried etch stop layer Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-12-14
6831364 Method for forming a porous dielectric material layer in a semiconductor device and device formed Timothy J. Dalton, Stephen E. Greco, Jeffrey Hedrick, Sampath Purushothaman, Kenneth P. Rodbell +1 more 2004-12-14
6780499 Ordered two-phase dielectric film, and semiconductor device containing the same Stephen M. Gates, Christopher B. Murray, Sampath Purushothaman 2004-08-24
6737725 Multilevel interconnect structure containing air gaps and method for making Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes, Kevin S. Petrarca, Sampath Purushothaman +2 more 2004-05-18
6734096 Fine-pitch device lithography using a sacrificial hardmask Timothy J. Dalton, Minakshisundaran Balasubramanian Anand, Michael D. Armacost, Shyng-Tsong Chen, Stephen M. Gates +2 more 2004-05-11
6724069 Spin-on cap layer, and semiconductor device containing same Timothy J. Dalton, Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Christy S. Tyberg 2004-04-20
6716742 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-04-06
6710450 Interconnect structure with precise conductor resistance and method to form same Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-03-23
6677680 Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materials Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-01-13