TB

Thomas H. Baum

AC Advanced Technology & Materials Co.: 11 patents #1 of 69Top 2%
SA Siemens Aktiengesellschaft: 1 patents #269 of 1,254Top 25%
📍 New Fairfield, CT: #1 of 24 inventorsTop 5%
🗺 Connecticut: #8 of 2,707 inventorsTop 1%
Overall (2004): #1,069 of 270,089Top 1%
11
Patents 2004

Issued Patents 2004

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
6822107 Chemical vapor deposition precursors for deposition of copper Gautam Bhandari, Chongying Xu 2004-11-23
6800218 Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same Ying Ma, Michael Jones, Deepak Verma, David Bernhard 2004-10-05
6773873 pH buffered compositions useful for cleaning residue from semiconductor substrates Ma. Fatima Seijo, William A. Wojtczak, David Bernhard, David W. Minsek 2004-08-10
6767830 Br2SbCH3 a solid source ion implant and CVD precursor Ziyun Wang, Chongying Xu, Michael A. Todd, Niamh McMahon 2004-07-27
6740586 Vapor delivery system for solid precursors and method of using same Luping Wang, Chongying Xu 2004-05-25
6736993 Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same Chongying Xu, Bryan C. Hendrix 2004-05-18
6735978 Treatment of supercritical fluid utilized in semiconductor manufacturing applications Glenn M. Tom, Michael B. Korzenski, Eliodor G. Ghenciu, Chongying Xu 2004-05-18
6730523 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Frank Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder +2 more 2004-05-04
6709610 Isotropic dry cleaning process for noble metal integrated circuit structures Peter C. Van Buskirk, Frank Dimeo, Jr., Peter S. Kirlin 2004-03-23
6692546 Chemical mechanical polishing compositions for metal and associated materials and method of using same Ying Ma, William A. Wojtczak, Cary Regulski, David Bernhard, Deepak Verma 2004-02-17
6692569 A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS Jeffrey F. Roeder, Ing-Shin Chen, Steven M. Bilodeau 2004-02-17