Issued Patents 2002
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6472283 | MOS transistor processing utilizing UV-nitride removable spacer and HF etch | Emi Ishida, Srinath Krishman, Ming-Yin Hao | 2002-10-29 |
| 6472233 | MOSFET test structure for capacitance-voltage measurements | Khaled Ahmed, Nguyen Duc Bui, John R. Hauser | 2002-10-29 |
| 6451641 | Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material | Arvind Halliyal, Robert B. Ogle, Joong S. Jeon, Fred Cheung | 2002-09-17 |
| 6444555 | Method for establishing ultra-thin gate insulator using anneal in ammonia | — | 2002-09-03 |
| 6429083 | Removable spacer technology using ion implantation to augment etch rate differences of spacer materials | Emi Ishida, Srinath Krishnan, Ming-Yin Hao | 2002-08-06 |
| 6417041 | Method for fabricating high permitivity dielectric stacks having low buffer oxide | — | 2002-07-09 |
| 6399519 | Method for establishing ultra-thin gate insulator having annealed oxide and oxidized nitride | — | 2002-06-04 |
| 6391784 | Spacer-assisted ultranarrow shallow trench isolation formation | — | 2002-05-21 |
| 6380047 | Shallow trench isolation formation with two source/drain masks and simplified planarization mask | Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Larry Wang, Christopher F. Lyons | 2002-04-30 |
| 6372582 | Indium retrograde channel doping for improved gate oxide reliability | Richard P. Rouse, Ming-Yin Hao, Emi Ishida | 2002-04-16 |
| 6344396 | Removable spacer technology using ion implantation for forming asymmetric MOS transistors | Emi Ishida, Srinath Krishman, Ming-Yin Hao | 2002-02-05 |
| 6342423 | MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch | Emi Ishida, Srinath Krishnan, Ming-Yin Hao | 2002-01-29 |