Issued Patents 2002
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6475868 | Oxygen implantation for reduction of junction capacitance in MOS transistors | Asim A. Selcuk, Richard P. Rouse, Emi Ishida | 2002-11-05 |
| 6472283 | MOS transistor processing utilizing UV-nitride removable spacer and HF etch | Emi Ishida, Srinath Krishman, Effiong Ibok | 2002-10-29 |
| 6444550 | Laser tailoring retrograde channel profile in surfaces | Emi Ishida | 2002-09-03 |
| 6429083 | Removable spacer technology using ion implantation to augment etch rate differences of spacer materials | Emi Ishida, Srinath Krishnan, Effiong Ibok | 2002-08-06 |
| 6423601 | Retrograde well structure formation by nitrogen implantation | Emi Ishida | 2002-07-23 |
| 6410393 | Semiconductor device with asymmetric channel dopant profile | Emi Ishida | 2002-06-25 |
| 6372590 | Method for making transistor having reduced series resistance | Deepak Nayak | 2002-04-16 |
| 6372582 | Indium retrograde channel doping for improved gate oxide reliability | Richard P. Rouse, Emi Ishida, Effiong Ibok | 2002-04-16 |
| 6344396 | Removable spacer technology using ion implantation for forming asymmetric MOS transistors | Emi Ishida, Srinath Krishman, Effiong Ibok | 2002-02-05 |
| 6342423 | MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch | Emi Ishida, Srinath Krishnan, Effiong Ibok | 2002-01-29 |