Issued Patents 2002
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6482725 | Gate formation method for reduced poly-depletion and boron penetration | — | 2002-11-19 |
| 6475868 | Oxygen implantation for reduction of junction capacitance in MOS transistors | Ming-Yin Hao, Asim A. Selcuk, Richard P. Rouse | 2002-11-05 |
| 6472283 | MOS transistor processing utilizing UV-nitride removable spacer and HF etch | Srinath Krishman, Ming-Yin Hao, Effiong Ibok | 2002-10-29 |
| 6455385 | Semiconductor fabrication with multiple low dose implant | Roger Alvis | 2002-09-24 |
| 6444550 | Laser tailoring retrograde channel profile in surfaces | Ming-Yin Hao | 2002-09-03 |
| 6429083 | Removable spacer technology using ion implantation to augment etch rate differences of spacer materials | Srinath Krishnan, Ming-Yin Hao, Effiong Ibok | 2002-08-06 |
| 6426279 | Epitaxial delta doping for retrograde channel profile | Carl Robert Huster | 2002-07-30 |
| 6423601 | Retrograde well structure formation by nitrogen implantation | Ming-Yin Hao | 2002-07-23 |
| 6410393 | Semiconductor device with asymmetric channel dopant profile | Ming-Yin Hao | 2002-06-25 |
| 6403433 | Source/drain doping technique for ultra-thin-body SOI MOS transistors | Bin Yu, Jonathan Kluth | 2002-06-11 |
| 6395606 | MOSFET with metal in gate for reduced gate resistance | Carl Robert Huster, Ognjen Milic-Strkalj | 2002-05-28 |
| 6372582 | Indium retrograde channel doping for improved gate oxide reliability | Richard P. Rouse, Ming-Yin Hao, Effiong Ibok | 2002-04-16 |
| 6355528 | Method to form narrow structure using double-damascene process | Scott Luning, Tim Thurgate | 2002-03-12 |
| 6344396 | Removable spacer technology using ion implantation for forming asymmetric MOS transistors | Srinath Krishman, Ming-Yin Hao, Effiong Ibok | 2002-02-05 |
| 6342423 | MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch | Srinath Krishnan, Ming-Yin Hao, Effiong Ibok | 2002-01-29 |
| 6337260 | Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion | — | 2002-01-08 |