Issued Patents All Time
Showing 76–100 of 151 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7502401 | VCSEL system with transverse P/N junction | Jeffrey N. Miller, Scott W. Corzine | 2009-03-10 |
| 7502405 | Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth | Michael Renne Ty Tan, Scott W. Corzine | 2009-03-10 |
| 7495314 | Ohmic contact on p-type GaN | Jeffrey N. Miller, Virginia Robbins, Steven D. Lester | 2009-02-24 |
| 7473941 | Structures for reducing operating voltage in a semiconductor device | Virginia Robbins, Steven D. Lester, Jeffrey N. Miller | 2009-01-06 |
| 7470599 | Dual-side epitaxy processes for production of nitride semiconductor structures | Sandeep Nijhawan, David Eaglesham, Lori D. Washington, Jacob Smith | 2008-12-30 |
| 7459380 | Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films | Sandeep Nijhawa, Jacob Smith, Lori D. Washington | 2008-12-02 |
| 7443561 | Deep quantum well electro-absorption modulator | Ashish Tandon, Michael Renne Ty Tan | 2008-10-28 |
| 7440666 | Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD | Scott W. Corzine | 2008-10-21 |
| 7399653 | Nitride optoelectronic devices with backside deposition | Jacob Smith, Jie Su, Sandeep Nijhawan | 2008-07-15 |
| 7374960 | Stress measurement and stress balance in films | Sandeep Nijhawan, Lori D. Washington, Jacob Smith | 2008-05-20 |
| 7364991 | Buffer-layer treatment of MOCVD-grown nitride structures | Jacob Smith, Sandeep Nijhawan | 2008-04-29 |
| 7358523 | Method and structure for deep well structures for long wavelength active regions | Michael Renne Ty Tan, Ashish Tandon | 2008-04-15 |
| 7352788 | Nitride semiconductor vertical cavity surface emitting laser | Scott W. Corzine | 2008-04-01 |
| 7349456 | Gain-coupled distributed quantum cascade laser | Scott W. Corzine | 2008-03-25 |
| 7345324 | Light emitting diodes with graded composition active regions | Nathan Gardner, Werner Goetz, Stephen A. Stockman, Tetsuya Takeuchi, Ghulam Hasnain +2 more | 2008-03-18 |
| 7276390 | Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same | Michael Renne Ty Tan, William Perez | 2007-10-02 |
| 7274719 | Buried heterostructure quantum cascade laser | Scott W. Corzine | 2007-09-25 |
| 7215848 | Optical isolator utilizing a micro-resonator | Michael Renne Ty Tan, William Trutna, Michael Leary | 2007-05-08 |
| 7184640 | Buried heterostructure device fabricated by single step MOCVD | Scott W. Corzine | 2007-02-27 |
| 7180923 | Laser employing a zinc-doped tunnel-junction | Chaokun Lin, Michael Renne Ty Tan, Bill Perez | 2007-02-20 |
| 7177061 | Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability | Jintian Zhu | 2007-02-13 |
| 7142342 | Electroabsorption modulator | Ashish Tandon, Scott W. Corzine, Chaokun Lin | 2006-11-28 |
| 7123637 | Nitride-based laser diode with GaN waveguide/cladding layer | Michael A. Kneissl, Linda Romano, Christian G. Van de Walle | 2006-10-17 |
| 7033938 | Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region | Tetsuya Takeuchi, Ashish Tandon, Ying-Lan Chang, Michael Renne Ty Tan, Scott W. Corzine | 2006-04-25 |
| 6967981 | Nitride based semiconductor structures with highly reflective mirrors | Christopher L. Chua, Michael A. Kneissl | 2005-11-22 |