Issued Patents All Time
Showing 101–125 of 151 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6955933 | Light emitting diodes with graded composition active regions | Nathan Gardner, Werner Goetz, Stephen A. Stockman, Tetsuya Takeuchi, Ghulam Hasnain +2 more | 2005-10-18 |
| 6931044 | Method and apparatus for improving temperature performance for GaAsSb/GaAs devices | Michael Renne Ty Tan, Ying-Lan Chang | 2005-08-16 |
| 6878959 | Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice | Ying-Lan Chang, Tetsuya Takeuchi, Danny E. Mars | 2005-04-12 |
| 6878970 | Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells | Michael Leary, Ying-Lan Chang, Yoon-Kyu Song, Michael Renne Ty Tan, Tetsuya Takeuchi +1 more | 2005-04-12 |
| 6875627 | Structure and method for index-guided buried heterostructure AlGaInN laser diodes | Michael A. Kneissl, Linda Romano | 2005-04-05 |
| 6816528 | Method and structure for nitride based laser diode arrays on a conducting substrate | Michael A. Kneissl, Noble M. Johnson, Jack Walker | 2004-11-09 |
| 6813295 | Asymmetric InGaAsN vertical cavity surface emitting lasers | Tetsuya Takeuchi, Ying-Lan Chang, Michael Leary, Michael Renne Ty Tan | 2004-11-02 |
| 6807214 | Integrated laser and electro-absorption modulator with improved extinction | Scott W. Corzine | 2004-10-19 |
| 6771680 | Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL) | Jeffrey N. Miller, Steve Lester, Virginia Robbins | 2004-08-03 |
| 6764926 | Method for obtaining high quality InGaAsN semiconductor devices | Tetsuya Takeuchi, Ying-Lan Chang, Michael Leary, Michael Renne Ty Tan, Andy Luan | 2004-07-20 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region | Tetsuya Takeuchi, Ashish Tandon, Ying-Lan Chang, Michael Renne Ty Tan, Scott W. Corzine | 2004-06-29 |
| 6757314 | Structure for nitride based laser diode with growth substrate removed | Michael A. Kneissl, Ping Mei, Linda Romano | 2004-06-29 |
| 6744800 | Method and structure for nitride based laser diode arrays on an insulating substrate | Michael A. Kneissl, Thomas L. Paoli, Noble M. Johnson, Jack Walker | 2004-06-01 |
| 6730944 | InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP | Ashish Tandon, Ying-Ian Chang, Scott W. Corzine, Michael Renne Ty Tan | 2004-05-04 |
| 6618413 | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure | Michael A. Kneissl | 2003-09-09 |
| 6597717 | Structure and method for index-guided, inner stripe laser diode structure | Michael A. Kneissl, Linda Romano, Brent S. Krusor, Noble M. Johnson | 2003-07-22 |
| 6574256 | Distributed feedback laser fabricated by lateral overgrowth of an active region | Daniel Hofstetter, Thomas L. Paoli, Linda Romano, Decai Sun, Michael A. Kneissl +2 more | 2003-06-03 |
| 6570898 | Structure and method for index-guided buried heterostructure AlGalnN laser diodes | Michael A. Kneissl, Linda Romano, Thomas L. Paoli, Christian G. Van de Walle | 2003-05-27 |
| 6567443 | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes | Michael A. Kneissl, Linda Romano, Thomas L. Paoli, Christian G. Van de Walle | 2003-05-20 |
| 6541292 | Method for forming an asymmetric nitride laser diode | Christian G. Van de Walle, Michael A. Kneissl, Linda Romano | 2003-04-01 |
| 6455340 | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff | Christopher L. Chua, Michael A. Kneissl | 2002-09-24 |
| 6448102 | Method for nitride based laser diode with growth substrate removed | Michael A. Kneissl, Ping Mei, Linda Romano | 2002-09-10 |
| 6430202 | Structure and method for asymmetric waveguide nitride laser diode | Christian G. Van de Walle, Michael A. Kneissl, Linda Romano | 2002-08-06 |
| 6389051 | Structure and method for asymmetric waveguide nitride laser diode | Christian G. Van de Walle, Michael A. Kneissl, Linda Romano | 2002-05-14 |
| 6365429 | Method for nitride based laser diode with growth substrate removed using an intermediate substrate | Michael A. Kneissl, Ping Mei, Linda Romano | 2002-04-02 |