YC

Yin Chen

VS Vanguard International Semiconductor: 8 patents #66 of 585Top 15%
TSMC: 2 patents #6,667 of 12,232Top 55%
II I/O Interconnect: 1 patents #9 of 21Top 45%
Overall (All Time): #403,153 of 4,157,543Top 10%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
11989966 Semiconductor devices and methods for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2024-05-21
11315964 Optical sensors and methods for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2022-04-26
11177397 Semiconductor devices and methods for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2021-11-16
10935805 Optical sensor and method for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2021-03-02
10770602 Optical sensor and method for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2020-09-08
10763288 Semiconductor device and method for forming the same Hsin-Hui Lee, Han-Liang Tseng, Jiunn-Liang Yu, Kwang-Ming Lin, Si-Twan Chen +3 more 2020-09-01
10572070 Optical devices and fabrication method thereof Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Chung-Ren Lao +5 more 2020-02-25
9847256 Methods for forming a device having a capped through-substrate via structure Yung-Chi Lin, Yen-Hung Chen, Ebin Liao, Ku-Feng Yang, Tsang-Jiuh Wu +1 more 2017-12-19
9514986 Device with capped through-substrate via structure Yung-Chi Lin, Yen-Hung Chen, Ebin Liao, Ku-Feng Yang, Tsang-Jiuh Wu +1 more 2016-12-06
8246388 USB port, USB plug, and connection structure thereof Ren Su 2012-08-21
6294476 Plasma surface treatment method for forming patterned TEOS based silicon oxide layer with reliable via and interconnection formed therethrough Sen-Horng Lin, How-Ming Lien 2001-09-25
6143666 Plasma surface treatment method for forming patterned TEOS based silicon oxide layer with reliable via and interconnection formed therethrough Sen-Horng Lin, How-Ming Lien 2000-11-07