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USPTO Patent Rankings Data through Dec 31, 2025
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Manfred Schiekofer — 9 Patents

TITexas Instruments: 9 patents #1,623 of 12,488Top 15%
Freising, DE: #48 of 471 inventorsTop 15%
Overall (All Time): #535,341 of 4,157,543Top 15%
9 Patents All Time
Manfred Schiekofer has been granted 9 US patents while listed as an inventor at Texas Instruments. The first was granted in 2006 and the most recent in July 2015. Manfred Schiekofer ranks #535,341 of 4,157,543 US inventors in our database (top 12.9%). Patent records list Manfred Schiekofer in Freising, DE.

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
9090991 Controlling an epitaxial growth process in an epitaxial reactor Pietro Foglietti, Robert J. Maier 2015-07-28 $10,990,000
8940093 Method of controlling an epitaxial growth process in an epitaxial reactor Pietro Foglietti, Robert J. Maier 2015-01-27 $9,114,000
8932942 Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact Philipp Steinmann, Michael Kraus, Thomas Scharnagl, Wolfgang Schwartz 2015-01-13 $22,709,000
8330223 Bipolar transistor Klaus Schimpf, Carl Willis, Michael Waitschull, Wolfgang Ploss 2012-12-11 $16,145,000
8294218 Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection Badih El-Kareh, Scott Balster, Hiroshi Yasuda 2012-10-23 $9,825,000
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard, Alfred Hausler 2012-08-21 $8,733,000
7772057 Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection Badih El-Kareh, Scott Balster, Hiroshi Yasuda 2010-08-10 $6,240,000
7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer Jeffrey A. Babcock, Scott Balster, Alfred Haeusler, Angelo Pinto, Philipp Steinmann +1 more 2007-05-15 $13,934,000
7144789 Method of fabricating complementary bipolar transistors with SiGe base regions Badih El-Kareh, Scott Balster, Philipp Steinmann, Thomas Scharnagl, Carl Willis 2006-12-05 $15,699,000