| 9090991 |
Controlling an epitaxial growth process in an epitaxial reactor |
Pietro Foglietti, Robert J. Maier |
2015-07-28 |
| 8940093 |
Method of controlling an epitaxial growth process in an epitaxial reactor |
Pietro Foglietti, Robert J. Maier |
2015-01-27 |
| 8932942 |
Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact |
Philipp Steinmann, Michael Kraus, Thomas Scharnagl, Wolfgang Schwartz |
2015-01-13 |
| 8330223 |
Bipolar transistor |
Klaus Schimpf, Carl Willis, Michael Waitschull, Wolfgang Ploss |
2012-12-11 |
| 8294218 |
Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection |
Badih El-Kareh, Scott Balster, Hiroshi Yasuda |
2012-10-23 |
| 8247300 |
Control of dopant diffusion from buried layers in bipolar integrated circuits |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard, Alfred Hausler |
2012-08-21 |
| 7772057 |
Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection |
Badih El-Kareh, Scott Balster, Hiroshi Yasuda |
2010-08-10 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
Jeffrey A. Babcock, Scott Balster, Alfred Haeusler, Angelo Pinto, Philipp Steinmann +1 more |
2007-05-15 |
| 7144789 |
Method of fabricating complementary bipolar transistors with SiGe base regions |
Badih El-Kareh, Scott Balster, Philipp Steinmann, Thomas Scharnagl, Carl Willis |
2006-12-05 |