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Method for producing a ceramic component composed of a plurality of joined preforms and component obtained by the method |
PETER POLSTER, Andreas Kienzle, Thomas Putz, ALBIN VON GANSKI, Blasius Hell |
2020-06-30 |
| 8703568 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2014-04-22 |
| 8648432 |
Fully embedded micromechanical device, system on chip and method for manufacturing the same |
— |
2014-02-11 |
| 8603374 |
Processes for producing a polymer-bonded fiber agglomerate and a fiber-reinforced composite material |
Peter Domagalski, Ingrid Kraetschmer, Andreas Kienzle, Dieter Wuestner |
2013-12-10 |
| 8470679 |
Semiconductor device including a deep contact and a method of manufacturing such a device |
— |
2013-06-25 |
| 8129246 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2012-03-06 |
| 8093115 |
Tuning of SOI substrate doping |
Wolfgang Schwartz, Vladimir F. Drobny |
2012-01-10 |
| 7888225 |
Method of manufacturing an electronic device including a PNP bipolar transistor |
— |
2011-02-15 |
| 7883977 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2011-02-08 |
| 7655523 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2010-02-02 |
| 7501324 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2009-03-10 |
| 7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
Jeffrey A. Babcock, Scott Balster, Angelo Pinto, Manfred Schiekofer, Philipp Steinmann +1 more |
2007-05-15 |
| 7199430 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2007-04-03 |
| 7118981 |
Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor |
Philipp Steinmann, Scott Balster, Badih El-Kareh |
2006-10-10 |
| 7064399 |
Advanced CMOS using super steep retrograde wells |
Jeffrey A. Babcock, Angelo Pinto, Scott Balster, Gregory E. Howard |
2006-06-20 |
| 6774455 |
Semiconductor device with a collector contact in a depressed well-region |
Jeffrey A. Babcock, Christoph Dirnecker, Angelo Pinto, Scott Balster, Michael Schober |
2004-08-10 |