DS

David B. Spratt

TI Texas Instruments: 18 patents #707 of 12,488Top 6%
Overall (All Time): #242,224 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6548337 Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technology Chi-Cheong Shen, Michael D. Aragon, Kamel Benaissa 2003-04-15
6143594 On-chip ESD protection in dual voltage CMOS Alwin Tsao, Vikas Gupta, Gregory Charles Baldwin, E. Ajith Amerasekera, Timothy A. Rost 2000-11-07
6137144 On-chip ESD protection in dual voltage CMOS Alwin Tsao, Vikas Gupta, Gregory Charles Baldwin, E. Ajith Amerasekera, Timothy A. Rost 2000-10-24
5434432 Antifuse device for controlling current in a circuit using an antifuse Kueing-Long Chen 1995-07-18
5316957 Method of forming a recessed contact bipolar transistor Robert L. Virkus, Robert H. Eklund, Eldon J. Zorinsky 1994-05-31
5284788 Method and device for controlling current in a circuit Kueing-Long Chen 1994-02-08
5075241 Method of forming a recessed contact bipolar transistor and field effect device Robert L. Virkus, Robert H. Eklund, Eldon J. Zorinsky 1991-12-24
5065209 Bipolar transistor fabrication utilizing CMOS techniques Rajiv Shah 1991-11-12
5041394 Method for forming protective barrier on silicided regions Robert H. Eklund 1991-08-20
5019525 Method for forming a horizontal self-aligned transistor Robert L. Virkus, Eldon J. Zorinsky 1991-05-28
4985744 Method for forming a recessed contact bipolar transistor and field effect transistor Robert L. Virkus, Robert H. Eklund, Eldon J. Zorinsky 1991-01-15
4982263 Anodizable strain layer for SOI semiconductor structures Eldon J. Zorinsky, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley 1991-01-01
4962053 Bipolar transistor fabrication utilizing CMOS techniques Rajiv Shah 1990-10-09
4897703 Recessed contact bipolar transistor and method Robert L. Virkus, Robert H. Eklund, Eldon J. Zorinsky 1990-01-30
4897698 Horizontal structure thin film transistor Eldon J. Zorinsky, James D. Guillory 1990-01-30
4891103 Anadization system with remote voltage sensing and active feedback control capabilities Eldon J. Zorinsky 1990-01-02
4849370 Anodizable strain layer for SOI semiconductor structures Eldon J. Zorinsky, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley 1989-07-18
4810667 Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer Eldon J. Zorinsky, Richard L. Yeakley 1989-03-07
4628591 Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon Eldon J. Zorinsky 1986-12-16