Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5316957 | Method of forming a recessed contact bipolar transistor | David B. Spratt, Robert L. Virkus, Robert H. Eklund | 1994-05-31 |
| 5075241 | Method of forming a recessed contact bipolar transistor and field effect device | David B. Spratt, Robert L. Virkus, Robert H. Eklund | 1991-12-24 |
| 5019525 | Method for forming a horizontal self-aligned transistor | Robert L. Virkus, David B. Spratt | 1991-05-28 |
| 4985744 | Method for forming a recessed contact bipolar transistor and field effect transistor | David B. Spratt, Robert L. Virkus, Robert H. Eklund | 1991-01-15 |
| 4982263 | Anodizable strain layer for SOI semiconductor structures | David B. Spratt, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley | 1991-01-01 |
| 4897703 | Recessed contact bipolar transistor and method | David B. Spratt, Robert L. Virkus, Robert H. Eklund | 1990-01-30 |
| 4897698 | Horizontal structure thin film transistor | David B. Spratt, James D. Guillory | 1990-01-30 |
| 4891103 | Anadization system with remote voltage sensing and active feedback control capabilities | David B. Spratt | 1990-01-02 |
| 4849370 | Anodizable strain layer for SOI semiconductor structures | David B. Spratt, Robert L. Virkus, Kenneth E. Bean, Richard L. Yeakley | 1989-07-18 |
| 4810667 | Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer | David B. Spratt, Richard L. Yeakley | 1989-03-07 |
| 4628591 | Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon | David B. Spratt | 1986-12-16 |