Issued Patents All Time
Showing 126–150 of 193 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201228 | Semiconductor device with air-spacer | Feng-Cheng Yang, Chung-Te Lin, Yen-Ming Chen | 2021-12-14 |
| 11189705 | Methods of reducing parasitic capacitance in multi-gate field-effect transistors | I-Hsieh Wong, Feng-Cheng Yang, Yen-Ming Chen | 2021-11-30 |
| 11189706 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Kai-Hsuan Lee, Sai-Hooi Yeong, Kuan-Lun Cheng, Chih-Hao Wang | 2021-11-30 |
| 11152486 | FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance | Cheng-Yu Yang, Kai-Hsuan Lee, Fu-Kai Yang, Yen-Ming Chen | 2021-10-19 |
| 11107735 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2021-08-31 |
| 11107734 | Semiconductor device and manufacturing method thereof | Feng-Cheng Yang, Ting-Yeh Chen | 2021-08-31 |
| 11088245 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Yen-Ming Chen, Feng-Cheng Yang | 2021-08-10 |
| 11031498 | Semiconductor structure with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2021-06-08 |
| 11011634 | Elongated source/drain region structure in finFET device | Ting-Yeh Chen, Chii-Horng Li, Feng-Cheng Yang | 2021-05-18 |
| 10991800 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Kuo-Feng Yu +2 more | 2021-04-27 |
| 10937894 | Structure of a fin field effect transistor (FinFET) | Chih-Shan Chen | 2021-03-02 |
| 10879395 | Method for forming semiconductor device structure with cap layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-29 |
| 10872889 | Semiconductor component and fabricating method thereof | Ting-Yeh Chen, Han-Wei Wu, Feng-Cheng Yang | 2020-12-22 |
| 10868181 | Semiconductor structure with blocking layer and method for forming the same | Kun-Mu Li, Wen-Chu Hsiao | 2020-12-15 |
| 10868130 | Semiconductor device and method of manufacture | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-15 |
| 10867870 | Semiconductor device with funnel shape spacer and methods of forming the same | Cheng-Yu Yang, Yen-Ting Chen, Fu-Kai Yang, Yen-Ming Chen | 2020-12-15 |
| 10861753 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Kai-Hsuan Lee, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10861749 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10854615 | FinFET having non-merging epitaxially grown source/drains | Chun Po Chang, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Tzu-Hsiang Hsu | 2020-12-01 |
| 10854726 | Integrated circuit with doped low-k sidewall spacers for gate stacks | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-01 |
| 10770354 | Method of forming integrated circuit with low-k sidewall spacers for gate stacks | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2020-09-08 |
| 10756171 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Yen-Ming Chen, Feng-Cheng Yang | 2020-08-25 |
| 10748820 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2020-08-18 |
| 10741642 | Formation of dislocations in source and drain regions of finFET devices | Chun Hsiung Tsai, Wei-Yuan Lu, Chien-Tai Chan, Da-Wen Lin | 2020-08-11 |
| 10714619 | PMOS FinFET | Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen | 2020-07-14 |