Issued Patents All Time
Showing 151–175 of 193 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10629736 | Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2020-04-21 |
| 10535757 | Structure of a fin field effect transistor (FinFET) | Chih-Shan Chen | 2020-01-14 |
| 10522642 | Semiconductor device with air-spacer | Feng-Cheng Yang, Chung-Te Lin, Yen-Ming Chen | 2019-12-31 |
| 10522420 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10522680 | Finfet semiconductor device structure with capped source drain structures | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-31 |
| 10497628 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-12-03 |
| 10453753 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2019-10-22 |
| 10403551 | Source/drain features with an etch stop layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2019-09-03 |
| 10396156 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Kuo-Feng Yu +2 more | 2019-08-27 |
| 10374055 | Buffer layer on semiconductor devices | Cheng-Hao Hou, Xiong-Fei Yu, Kuang-Yuan Hsu | 2019-08-06 |
| 10217815 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Yen-Ming Chen, Feng-Cheng Yang | 2019-02-26 |
| 10158006 | Source/drain structure of a fin field effect transistor (FinFET) | Chih-Shan Chen | 2018-12-18 |
| 10158000 | Low-K dielectric sidewall spacer treatment | Chia-Chun Lan | 2018-12-18 |
| 10158007 | Semiconductor device and manufacturing method thereof | Feng-Cheng Yang, Ting-Yeh Chen | 2018-12-18 |
| 10158017 | Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2018-12-18 |
| 10153344 | Formation of dislocations in source and drain regions of FinFET devices | Chun Hsiung Tsai, Wei-Yuan Lu, Chien-Tai Chan, Da-Wen Lin | 2018-12-11 |
| 10134902 | PMOS FinFET | Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen | 2018-11-20 |
| 9865504 | Semiconductor device and manufacturing method thereof | Feng-Cheng Yang, Ting-Yeh Chen | 2018-01-09 |
| 9812576 | Semiconductor device and manufacturing method thereof | Feng-Cheng Yang, Ting-Yeh Chen | 2017-11-07 |
| 9768256 | Formation of dislocations in source and drain regions of FinFET devices | Chun Hsiung Tsai, Wei-Yuan Lu, Chien-Tai Chan, Da-Wen Lin | 2017-09-19 |
| 9748389 | Method for semiconductor device fabrication with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2017-08-29 |
| 9741831 | FinFET and method for manufacturing the same | Ting-Yeh Chen | 2017-08-22 |
| 9570556 | Semiconductor device and manufacturing method thereof | Feng-Cheng Yang, Ting-Yeh Chen | 2017-02-14 |
| 9537008 | Source/drain structure of semiconductor device | Chih-Shan Chen | 2017-01-03 |
| 9343575 | FinFET and method of manufacturing the same | Ting-Yeh Chen, Chia-Ling Chan, Chien-Tai Chan | 2016-05-17 |