Issued Patents All Time
Showing 76–100 of 193 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855167 | Structure and formation method of semiconductor device with nanosheet structure | Po-Cheng Wang, Ting-Yeh Chen, De-Fang Chen | 2023-12-26 |
| 11855220 | Method and structure for air gap inner spacer in gate-all-around devices | Shih-Chiang Chen, Chia-Pin Lin, Yuan-Ching Peng | 2023-12-26 |
| 11830922 | Semiconductor device with air-spacer | Feng-Cheng Yang, Chung-Te Lin, Yen-Ming Chen | 2023-11-28 |
| 11810825 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2023-11-07 |
| 11798996 | Backside contact with air spacer | Chen-Ming Lee | 2023-10-24 |
| 11799002 | Semiconductor devices and methods of forming the same | Yen-Po Lin, Yuan-Ching Peng, Chia-Pin Lin, Jiun-Ming Kuo | 2023-10-24 |
| 11769820 | Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2023-09-26 |
| 11749719 | Source/drain features | Ruei-Ping Lin, Kai-Di Tzeng, Chen-Ming Lee | 2023-09-05 |
| 11735660 | Method of forming semiconductor device | Ting-Yeh Chen, Chii-Horng Li, Feng-Cheng Yang | 2023-08-22 |
| 11735641 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Kai-Hsuan Lee, Sai-Hooi Yeong, Kuan-Lun Cheng, Chih-Hao Wang | 2023-08-22 |
| 11728344 | Hybrid SRAM design with nano-structures | I-Hsieh Wong, Feng-Cheng Yang, Yen-Ming Chen | 2023-08-15 |
| 11728223 | Semiconductor device and methods of manufacture | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2023-08-15 |
| 11710792 | Semiconductor structure with improved source drain epitaxy | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang | 2023-07-25 |
| 11699737 | Integrated circuit with doped low-k side wall spacers for gate spacers | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2023-07-11 |
| 11694933 | Methods of forming metal gate spacer | Yen-Ting Chen, Yi-Hsiu Liu, Feng-Cheng Yang, Yen-Ming Chen | 2023-07-04 |
| 11688794 | Method for epitaxial growth and device | Tzu-Hsiang Hsu, Ting-Yeh Chen, Feng-Cheng Yang, Yen-Ming Chen | 2023-06-27 |
| 11688793 | Integrated circuit structure and manufacturing method thereof | Wei Hao Lu, Chien-I Kuo, Li-Li Su, Yee-Chia Yeo | 2023-06-27 |
| 11677028 | PMOS FinFET | Chia-Chun Lan, Chia-Ling Chan, Feng-Cheng Yang, Yen-Ming Chen | 2023-06-13 |
| 11631746 | Semiconductor device and method of manufacture | Yen-Ting Chen, Feng-Cheng Yang, Yen-Ming Chen | 2023-04-18 |
| 11631736 | Epitaxial source/drain feature with enlarged lower section interfacing with backside via | Feng-Ching Chu, Chia-Pin Lin | 2023-04-18 |
| 11626508 | Structure of a fin field effect transistor (FinFET) | Chih-Shan Chen | 2023-04-11 |
| 11626505 | Dielectric inner spacers in multi-gate field-effect transistors | I-Hsieh Wong, Feng-Cheng Yang, Yen-Ming Chen | 2023-04-11 |
| 11575047 | Semiconductor device active region profile and method of forming the same | Feng-Ching Chu, Chia-Pin Lin | 2023-02-07 |
| 11569386 | Method for forming semiconductor device structure with cap layer | Feng-Ching Chu, Feng-Cheng Yang, Yen-Ming Chen | 2023-01-31 |
| 11532749 | Semiconductor structure with blocking layer | Kun-Mu Li, Wen-Chu Hsiao | 2022-12-20 |